OZONE has been used to perform high speed etching for GaAs, GaN, Si deep trench. It offers a low risk manufacturing solution, high profit via high productivity to customer.

Application

• Anisotropic etching of all type of silicon based film, etching of GaAs, GaN, Inp and other compound semiconductor material, fabrication of micromachines, etching of metal films.

Technology

• High & uniform density ICP plasma
• Active wafer temperature control (He backside cooling)
• High process productivity
• Recipe storage and data logging
  

Specification

• 1 process chamber
  
• 1 load lock chamber with standard wafer magazines
  
• Robot arm transfer module
• Electrostatic wafer clamping with He backside cooling
• High density plasma source
• RF generator & 13.56MHz auto matcher for ICP source&substrate bias
  
• Turbo molecular pump of high-vacuum pumping
  
• Auto pressure control with throttle valve
  
• Gas delivery module with mass flow controller
  
• Manual / PC, PLC control including Windows user interface
  for fully automatic process control