Foundry Service

Foundry Service


Negotiable Min Order Quantity Unit

Required Quantity
Place of Origin
Payment Terms
Negotiable
Production method
Negotiable
Shipping / Lead Time
Negotiable / Negotiable
Keyword
Category
Other Computer Accessories

H&S HighTech Corp.

Country / Year Established
South Korea South Korea / 1998
Business type
Manufacturer
Verified Certificate

16

TRADE TOWER

DUNS

Product name Foundry Service Certification -
Category Other Computer Accessories Ingredients -
Keyword - Unit Size -
Brand name - Unit Weigh -
origin Stock -
Supply type - HS code -

Product Information

Descriptions

Telephus' TIPD is an advanced passive process using thick Cu metal. This foundry process is targeted to high performance, low cost and small size of passive only circuits like filters or diplexers. Thick Cu (10 m) metallization layer and insulated surface of Si (25 m SiO2 layer on top) make it possible to obtain high RF performance for wireless communication systems and integrated RF modules. Low dielectric constant material is adapted to reduce parasitic capacitance between metal layers. Precision NiCr resistors and SiN MIM capacitors are also available. Electro-Plated Ni/Au pad is used for wire bond interconnection or Cu pad for solder ball bumping. Packaged or die-form chips are provided on customers' request. The TIPD process uses 6" (150mm diameter) wafers for high volume production.

Features

  • Thin Film Process on insulated Silicon
  • Thick 3 Layer Metal: 10 m Cu
  • Fine Pitch Metallization: 10 m width
  • High Q Inductor: Q > 30 @ 2GHz
  • Low Cost: Cu metal and Si substrate
  • Thin Film NiCr Resistor
  • Low Dielectric Constant Material (BCB)
  • SiN (1100Å) MIM Capacitor
  • Ni/Au Pad for Wire Bond
  • Solder Ball Bumping available on Cu Pad
  • Surface Passivation using BCB
  • Mass Production (6" wafer)
  • High Power Applications

Applications

  • Passive Only Circuits
    • Filter
    • Diplexer
    • Balun
    • Coupler
    • Phase Shift Network
    • Power Combiner
    • Customized Passive Network
  • High Performance Circuit requiring High-Q
  • Matching Networks
  • High Power Circuits
  • Components for RF Multi-chip Module (MCM)
  • General Use for RF and Microwave Application

TIPD Process Details

Element
Parameter
Value
Units
Substrate
SiO2 Layer (25µm)
Dielectric Constant = 2.5
-
Si Sub (650µm)
8~10
ohm-cm
Interconnects
Metal Thickness
Three: 1, 0.7, 10
µm
Minimum Space
Met1 & 2=2, Met3=5
µm
Trace Width
Met1 & 2=2, Met3=10
µm
BCB Dielectric
Nom Thickness
Die1=2, Met3=10
µm
Dielectric Contrant
2.65
-
MIM Capacitor
Density
550 @ 1100A
PF/mm2
Maximum value
100
pF
Breakdown Voltage
> 100 (100 x 100 µm)
V
Inductor
Width & Spacing
W=10, 30, 50, S=5, 10
µm
Q factor @ 2GHz
> 30
-
Maximum Value
37
nH
Resistors
NiCr
20
ohm/sq
Back End
No Substrate Vias, No back side metallization
Substrate Thickness
Typical (Solder Ball)
650
µm
For Wire bonding
12 (recommended)
mil

Others

  • Preliminary Design Manual Available
  • Device Library for Thin Film Resistors, Capacitors and Inductors (ADS Compatible)
  • Agilent ADS Simulation or 3D EM Simulation Support
  • Reliability Reports available as Request
  • Tiling of GDSII Stream Files including PCM
  • Supports for Packaging Development and RF Test Development (on wafers and packaging)
  • Qualification Services
  • Failure Analysis

B2B Trade

Price (FOB) Negotiable transportation -
MOQ Negotiable Leadtime Negotiable
Payment Options Negotiable Shipping time Negotiable

H&S HighTech Corp.

Country / Year Established
South Korea South Korea / 1998
Business type
Manufacturer

16

TRADE TOWER

DUNS

President
Ilkwon Dong
Address
25-11, Jang-dong, Yuseong-gu, Daejeon, 305-343, Korea
Product Category
Other Telecommunications Equipment
Year Established
1998
No. of Total Employees
1-50
Company introduction

Telephus Inc. is a venture corporation that develops, manufactures, and markets wireless telecommunication components with its own design capability and innovative smart substrate technology. The value of Telephus products is its breakthrough, patented manufacturing technology for smart silicon substrates, which creates demonstrable customer benefits in term of cost, function, and product reliability.

For instance, with a new concept of RF IC design (called "TR-Array") spun off from smart substrate technology, Telephus has received an award from ECTC, US, 2000 (sponsored by Motorola). Smart Substrate Technology provides outstanding cost benefit by integrating numerous passive components of GaAs (or SiGe) RF IC into a silicon substrate without any sacrifice of electrical property.

In addition, for diversified product lines in the semiconductor component industry, Telephus has developed an innovative ACF (Antistrophic Conductive Film: Advanced Electronic Package Material) showing significant improvement of T/C (Thermal Cycle) reliability of flip chip on organic substrates with lower CTE and higher modulus of NCF layer.

Main Markets

China China

Hong Kong(China) Hong Kong(China)

Japan Japan

Malaysia Malaysia

Philippines Philippines

Main Product

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