Originally used for the production of bipolar devices, silicon epitaxial wafers have recently been adopted as a means of avoiding latch-up in CMOS devices. Expectations of these wafers are also growing because of reports that crystal originated particles in CZ wafers have adverse effects on highly integrated MOS devices. To meet this growing need, Hitachi Kokusai Electric offers its DC series of silicon epitaxial growing systems, featuring high-quality epitaxial layer growth and excellent cost performance.

Benefits and Features

• Actualizes high efficiencies and quality through bulk processing, efficient gas substitution and rapid temperature control.
  
• Improves operation rate and safety with easy maintenance structure.
  
• Low particle generation due to ultra-clean design actualizes excellent yield rate. Since dual reactor design features metal outer bell-jar and quartz inner bell-jar, metal contamination can be minimized.

Specifications