GaN HEMT Epi Wafer on SiC Substrate Manufacturer RF POWER Structure
GaN HEMT Epi Wafer on SiC Substrate Manufacturer RF POWER Structure
Negotiable Min Order Quantity Unit
- Required Quantity
-
- Place of Origin
- China
- Payment Terms
- T/T
- Production method
- Available
- Shipping / Lead Time
- Negotiable / Negotiable
- Category
- Semiconductors
Suzhou Hengmairui Materials Technology Co.,Ltd.
- Membership
- BIZ
- Recent Visit
- Dec 13, 2024
- Country / Year Established
-
China
/
2009
- Business type
- Manufacturer
- Verified Certificate
-
9
| Product name | GaN HEMT Epi Wafer on SiC Substrate Manufacturer RF POWER Structure | Certification | - |
|---|---|---|---|
| Category | Semiconductors | Material | - |
| Keyword | gan epi wafer manufacturer , gan on sic epi wafer supplier | Unit Size | - |
| Brand name | - | Unit Weigh | - |
| origin | China | Stock | 12 |
| Supply type | Available | HS code | - |
Product Information
GaN Epi Wafer Manufacturer HMT using MOCVD growing GaN Epi layer on SiC substrate,we have RF structure and Power Structure for different application. Normally, we provide 4 inch and 6 inch GaN on SiC epi Wafer with bottom price.
MOCVD is a common epitaxial growth method of gallium nitride. The basic principle is to use trimethyl gallium (Ga(CH)3) and ammonia (NH3) as reactants to generate gallium nitride films on the substrate under high temperature environment. The advantage of this method is that the thickness, composition and carrier density of the epitaxial material can be regulated by precisely controlling various gas flows, so as to obtain high-quality crystals.
GaN Epi Wafer Manufacturer HMT using MOCVD growing GaN Epi layer on SiC substrate,we have RF structure and Power Structure for different application. Normally, we provide 4 inch and 6 inch GaN on SiC epi Wafer with bottom price.
MOCVD is a common epitaxial growth method of gallium nitride. The basic principle is to use trimethyl gallium (Ga(CH)3) and ammonia (NH3) as reactants to generate gallium nitride films on the substrate under high temperature environment. The advantage of this method is that the thickness, composition and carrier density of the epitaxial material can be regulated by precisely controlling various gas flows, so as to obtain high-quality crystals.
B2B Trade
| Price (FOB) | Negotiable | transportation | Express |
|---|---|---|---|
| MOQ | Negotiable | Leadtime | Negotiable |
| Payment Options | T/T | Shipping time | Negotiable |
- President
- Cory
- Address
- LiSheng Industrial Building,60 Suli Road
- Product Category
- Semiconductors
- Year Established
- 2009
- No. of Total Employees
- 51-100
- Company introduction
-
Homray Material Technology(HMT)was established in 2009, is a leading manufacturer and supplier of Gallium Nitride(GaN) Substrate Wafer(GaN-On-Sapphire Template, Free-standing GaN Wafer), GaN Epi Wafer (GaN-On-Si Epi Wafer, GaN-On-Sapphire Epi Wafer, GaN-On-SiC Epi Wafer), and Silicon Carbide(SiC) Substrate Wafer, SiC Epi Wafer, Silicon Test Wafer etc. It is widely acknowledged that compound Semiconductor (GaN, SiC) with its superior property like wide-bandgap, is expected to the most promising material choice for next generation device. GaN device/module and SiC device/module can achieve low losses and fast switching/oscillation simultaneously because of its high critical electrical field. Homray Material Technology is committed to developing high quality GaN Wafer and SiC Wafer for HEMT RF, power electronics and opto-electronics applications. As the leading Substrate Wafer and Epi Wafer manufacturer and supplier in the semiconductor industry, our dealers and partners are mainly distributed in Europe, USA, Southeast Asia, and South America, our sales value exceeded 65 Million US dollars in 2020. Excellent products quality and professional service won the trust and support from our customers in the world as well as our share of market.
- Main Product
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