MOSFET SiC Substrate Wafer Manufacturer 8 inch SiC Supplier
MOSFET SiC Substrate Wafer Manufacturer 8 inch SiC Supplier
Negotiable Min Order Quantity Unit
- Required Quantity
-
- Place of Origin
- China
- Payment Terms
- T/T
- Production method
- Available
- Shipping / Lead Time
- Negotiable / Negotiable
- Category
- Semiconductors
Suzhou Hengmairui Materials Technology Co.,Ltd.
- Membership
- BIZ
- Recent Visit
- Dec 13, 2024
- Country / Year Established
-
China
/
2009
- Business type
- Manufacturer
- Verified Certificate
-
9
| Product name | MOSFET SiC Substrate Wafer Manufacturer 8 inch SiC Supplier | Certification | - |
|---|---|---|---|
| Category | Semiconductors | Material | - |
| Keyword | sic substrate supplier , sic wafer manufacturer , sic epi wafer supplier | Unit Size | - |
| Brand name | - | Unit Weigh | - |
| origin | China | Stock | 10 |
| Supply type | Available | HS code | - |
Product Information
Purchasing favourable price SiC Wafers from China HMT company which has many years experinece of SiC Wafer manufacturing. Normally we have 2 inch 4 inch 6 inch and 8 inch SiC Wafer with N type and SI type. Our SiC wafers have good electronic parameters and low MPD.
Silicon carbide wafers are the world's most advanced thirgeneration semiconductor materials, which have broad application prospects in new energy vehicles, photovoltaic, 5G communication, rail transit and other fields.
① High band gap (high temperature resistance) : automotive engine control, aerospace field;
High critical breakdown electric field and frequency response speed (high frequency) : radio frequency (RF) and microwave fields such as communication equipment and radar systems;
③ High thermal conductivity (good heat dissipation) : used to manufacture heat sink, heat dissipation module and other heat dissipation materials, widely used in computers, mobile phones, LED lamps and other fields;
High saturated electron drift speed and electron drift length (high power density) : electric vehicles, solar inverters and other power electronic devices;
⑤ Low on-off and switching losses (low resistance losses) : power converters, power electronic equipment and other fields, silicon carbide diodes (SiC diodes) and silicon carbide field-effect transistors (SiC FETs), and silicon carbide metal-oxide semiconductor field-effect transistors (SiC MOSFETs);
Corrosion resistance and chemical stability: chemical and biosensors are manufactured to detect various chemical and biomolecules in the environment.
Purchasing favourable price SiC Wafers from China HMT company which has many years experinece of SiC Wafer manufacturing. Normally we have 2 inch 4 inch 6 inch and 8 inch SiC Wafer with N type and SI type. Our SiC wafers have good electronic parameters and low MPD.
Silicon carbide wafers are the world's most advanced thirgeneration semiconductor materials, which have broad application prospects in new energy vehicles, photovoltaic, 5G communication, rail transit and other fields.
① High band gap (high temperature resistance) : automotive engine control, aerospace field;
High critical breakdown electric field and frequency response speed (high frequency) : radio frequency (RF) and microwave fields such as communication equipment and radar systems;
③ High thermal conductivity (good heat dissipation) : used to manufacture heat sink, heat dissipation module and other heat dissipation materials, widely used in computers, mobile phones, LED lamps and other fields;
High saturated electron drift speed and electron drift length (high power density) : electric vehicles, solar inverters and other power electronic devices;
⑤ Low on-off and switching losses (low resistance losses) : power converters, power electronic equipment and other fields, silicon carbide diodes (SiC diodes) and silicon carbide field-effect transistors (SiC FETs), and silicon carbide metal-oxide semiconductor field-effect transistors (SiC MOSFETs);
Corrosion resistance and chemical stability: chemical and biosensors are manufactured to detect various chemical and biomolecules in the environment.
B2B Trade
| Price (FOB) | Negotiable | transportation | Express |
|---|---|---|---|
| MOQ | Negotiable | Leadtime | Negotiable |
| Payment Options | T/T | Shipping time | Negotiable |
- President
- Cory
- Address
- LiSheng Industrial Building,60 Suli Road
- Product Category
- Semiconductors
- Year Established
- 2009
- No. of Total Employees
- 51-100
- Company introduction
-
Homray Material Technology(HMT)was established in 2009, is a leading manufacturer and supplier of Gallium Nitride(GaN) Substrate Wafer(GaN-On-Sapphire Template, Free-standing GaN Wafer), GaN Epi Wafer (GaN-On-Si Epi Wafer, GaN-On-Sapphire Epi Wafer, GaN-On-SiC Epi Wafer), and Silicon Carbide(SiC) Substrate Wafer, SiC Epi Wafer, Silicon Test Wafer etc. It is widely acknowledged that compound Semiconductor (GaN, SiC) with its superior property like wide-bandgap, is expected to the most promising material choice for next generation device. GaN device/module and SiC device/module can achieve low losses and fast switching/oscillation simultaneously because of its high critical electrical field. Homray Material Technology is committed to developing high quality GaN Wafer and SiC Wafer for HEMT RF, power electronics and opto-electronics applications. As the leading Substrate Wafer and Epi Wafer manufacturer and supplier in the semiconductor industry, our dealers and partners are mainly distributed in Europe, USA, Southeast Asia, and South America, our sales value exceeded 65 Million US dollars in 2020. Excellent products quality and professional service won the trust and support from our customers in the world as well as our share of market.
- Main Product
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