Buy 4 inch SiC Substrate from manufacturer in HMT. We are one of the professional SiC Wafer manufacturer in China, we can offer 4 inch SiC Substrate wafer, 4 inch As cut SiC Wafer and 4 inch SiC crystal boules with preferential price on the market. Actually 4 inch SiC Wafers were stop production for most manufacturers, but we still keep few capacity allocation for some customers. These substrates are made from silicon carbide (SiC), a compound known for its excellent thermal conductivity, high breakdown voltage, and resistance to harsh environmental conditions.

SiC device, the raw material for SiC, according to the different resistance properties, is divided into conductive SiC power devices and semi-insulated SiC based RF devices. The conductive SiC power device is mainly made by growing an epitaxial layer of SiC on a conductive substrate, and obtaining a SiC epitaxial sheet after further processing. Varieties include Schottky diodes, MOSFETs, IGBTs, etc., mainly used in electric vehicles, photovoltaic power generation, rail transit, data centers, charging and other infrastructure fields. The semi-insulated silicon carbon-based RF device is a gallium nitride epitaxial layer grown on the semi-insulated SiC substrate, and the silicon-based gallium nitride epitaxial sheet is prepared and further made, including HEMT gallium iso-nitride RF devices. It is mainly used in 5G communications, vehicle communications, national defense applications, data transmission, aerospace and other fields.