R Grade SiC Wafer Manufacturer 6 inch 4 inch
R Grade SiC Wafer Manufacturer 6 inch 4 inch
Negotiable Min Order Quantity Unit
- Required Quantity
-
- Place of Origin
- China
- Payment Terms
- T/T
- Production method
- Available
- Shipping / Lead Time
- Negotiable / Negotiable
- Category
- Semiconductors
Suzhou Hengmairui Materials Technology Co.,Ltd.
China
- Verified Certificate
-
9
| Product name | R Grade SiC Wafer Manufacturer 6 inch 4 inch | Certification | - |
|---|---|---|---|
| Category | Semiconductors | Material | - |
| Keyword | sic substrate manufacturer , sic wafer manufacturer 6 inch , sic substrate wafer supplier | Unit Size | - |
| Brand name | - | Unit Weigh | - |
| origin | China | Stock | 25 |
| Supply type | Available | HS code | - |
Product Information
A reliable SiC Wafer Manufacturer you can trust is HMT which offering single crystal SiC Wafers both D grade and P grade for different applications. 4H-N type and 4H-SI type are both available in HMT company. P grade SiC Wafers have ultra low MPD and used for power device like SBD,MOSFET. Even our D grade SiC wafer still has good parameters with low MPD low polytype low TTV etc... We suppy all dimensions from 50.8mm 2 inch to 200mm 8 inch SiC Substrate Wafers.
Silicon carbide (SiC) is a compound semiconductor material composed of carbon and silicon, which is one of the ideal materials for making high temperature, high frequency, high power and high voltage devices. Compared with the traditional silicon material (Si), the band gap of silicon carbide is 3 times that of silicon. The thermal conductivity is 4-5 times that of silicon; The breakdown voltage is 8-10 times that of silicon; The electronic saturation drift rate is 2-3 times that of silicon, which meets the needs of modern industry for high power, high voltage and high frequency. It is mainly used for the production of high-speed, high-frequency, high-power and light-emitting electronic components. The downstream application fields include smart grid, new energy vehicles, photovoltaic wind power, 5G communication, etc. Silicon carbide diodes and MOSFETs have been commercially applied.
B2B Trade
| Price (FOB) | Negotiable | transportation | Express |
|---|---|---|---|
| MOQ | Negotiable | Leadtime | Negotiable |
| Payment Options | T/T | Shipping time | Negotiable |
- President
- Cory
- Address
- LiSheng Industrial Building,60 Suli Road
- Product Category
- Semiconductors
- Year Established
- 2009
- No. of Total Employees
- 51-100
- Company introduction
-
Homray Material Technology(HMT)was established in 2009, is a leading manufacturer and supplier of Gallium Nitride(GaN) Substrate Wafer(GaN-On-Sapphire Template, Free-standing GaN Wafer), GaN Epi Wafer (GaN-On-Si Epi Wafer, GaN-On-Sapphire Epi Wafer, GaN-On-SiC Epi Wafer), and Silicon Carbide(SiC) Substrate Wafer, SiC Epi Wafer, Silicon Test Wafer etc. It is widely acknowledged that compound Semiconductor (GaN, SiC) with its superior property like wide-bandgap, is expected to the most promising material choice for next generation device. GaN device/module and SiC device/module can achieve low losses and fast switching/oscillation simultaneously because of its high critical electrical field. Homray Material Technology is committed to developing high quality GaN Wafer and SiC Wafer for HEMT RF, power electronics and opto-electronics applications. As the leading Substrate Wafer and Epi Wafer manufacturer and supplier in the semiconductor industry, our dealers and partners are mainly distributed in Europe, USA, Southeast Asia, and South America, our sales value exceeded 65 Million US dollars in 2020. Excellent products quality and professional service won the trust and support from our customers in the world as well as our share of market.
- Main Product
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