6 inch SiC Wafer Manufacturer supply P grade SiC substrate
6 inch SiC Wafer Manufacturer supply P grade SiC substrate 500um
Negotiable Min Order Quantity Unit
- Required Quantity
-
- Place of Origin
- China
- Payment Terms
- T/T
- Production method
- Available
- Shipping / Lead Time
- Negotiable / Negotiable
- Category
- Semiconductors
Suzhou Hengmairui Materials Technology Co.,Ltd.
- Membership
- BIZ
- Recent Visit
- Dec 13, 2024
- Country / Year Established
-
China
/
2009
- Business type
- Manufacturer
- Verified Certificate
-
9
| Product name | 6 inch SiC Wafer Manufacturer supply P grade SiC substrate | Certification | - |
|---|---|---|---|
| Category | Semiconductors | Material | - |
| Keyword | sic wafer supplier , sic substrate supplier , sic substrate wafer manufacturer | Unit Size | - |
| Brand name | - | Unit Weigh | - |
| origin | China | Stock | 25 |
| Supply type | Available | HS code | - |
Product Information
As the SiC Wafer manufactuer and supplier in China, we offer 6 inch P grade SiC wafer to worldwide customers with preferential price. we have normal 350um thichkness 6 inch SiC wafer and non-standard 500um 800um thickness of Conducitve type . In addition, we provide 2 inch 4 inch and 8 inch SiC Wafer with high quality low micropipe density.
As a wide bandgap semiconductor material, SiC has excellent characteristics such as high efficiency, high temperature stability, high voltage and current capability and high thermal conductivity. Compared with ordinary silicon, the breakdown electric field strength of SiC is nearly 10 times, the thermal conductivity is 3 times that of silicon materials, the electron mobility is also higher, and it can work at higher temperatures, which makes SiC more suitable for new energy vehicles and other fields.
In the context of the rapid development of new energy vehicles, Si-based materials have basically approached their physical limits, showing their limitations, and the industry has gradually put its eyes on SiC.The application of SiC power devices is helpful to realize the miniaturization of power modules, improve the power density and reliability of the motor drive system, and solve the problems faced by the development of new energy vehicles.
B2B Trade
| Price (FOB) | Negotiable | transportation | Express |
|---|---|---|---|
| MOQ | Negotiable | Leadtime | Negotiable |
| Payment Options | T/T | Shipping time | Negotiable |
- President
- Cory
- Address
- LiSheng Industrial Building,60 Suli Road
- Product Category
- Semiconductors
- Year Established
- 2009
- No. of Total Employees
- 51-100
- Company introduction
-
Homray Material Technology(HMT)was established in 2009, is a leading manufacturer and supplier of Gallium Nitride(GaN) Substrate Wafer(GaN-On-Sapphire Template, Free-standing GaN Wafer), GaN Epi Wafer (GaN-On-Si Epi Wafer, GaN-On-Sapphire Epi Wafer, GaN-On-SiC Epi Wafer), and Silicon Carbide(SiC) Substrate Wafer, SiC Epi Wafer, Silicon Test Wafer etc. It is widely acknowledged that compound Semiconductor (GaN, SiC) with its superior property like wide-bandgap, is expected to the most promising material choice for next generation device. GaN device/module and SiC device/module can achieve low losses and fast switching/oscillation simultaneously because of its high critical electrical field. Homray Material Technology is committed to developing high quality GaN Wafer and SiC Wafer for HEMT RF, power electronics and opto-electronics applications. As the leading Substrate Wafer and Epi Wafer manufacturer and supplier in the semiconductor industry, our dealers and partners are mainly distributed in Europe, USA, Southeast Asia, and South America, our sales value exceeded 65 Million US dollars in 2020. Excellent products quality and professional service won the trust and support from our customers in the world as well as our share of market.
- Main Product
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