900um As-cut SiC Wafer Manufacturer For Abrasives test
900um As-cut SiC Wafer Manufacturer For Abrasives test
Negotiable Min Order Quantity Unit
- Required Quantity
-
- Place of Origin
- China
- Payment Terms
- T/T
- Production method
- Available
- Shipping / Lead Time
- Negotiable / Negotiable
- Category
- Semiconductors
Suzhou Hengmairui Materials Technology Co.,Ltd.
- Verified Certificate
-
9
Product name | 900um As-cut SiC Wafer Manufacturer For Abrasives test | Certification | - |
---|---|---|---|
Category | Semiconductors | Material | - |
Keyword | as-cut sic wafer manufacturer , sic slicing wafer supplier , raw cut sic wafer supplier | Unit Size | - |
Brand name | - | Unit Weigh | - |
origin | China | Stock | 25 |
Supply type | Available | HS code | - |
Product Information
900um As-cut SiC Wafer Manufacturer For Abrasives test
Are you looking for more thicker SiC As-cut wafer on the market? Normally, the unpolished SiC wafer thickness about 400um 475um, but HMT company can produces 500um 600um 900um 1150um SiC wafer no lapping no polishing for abrasives testing, grinding wheel testing etc. we will provide competitive price of Raw cut SiC wafer to you. Please contact us immediately。
Customization:
Product Customization Services for the As-cut SiC Wafer:
Brand Name: HMT
Model Number: 6 INCH
Place of Origin: CHINA
Minimum Order Quantity: 25PCS
Price: Contact us
Packaging Details: Cassette
Delivery Time: 30days
Payment Terms: T/T
Dopant: N-typeNitrogen
Front: Si Face
Resistivity: 0.015-0.028 Ohm-cm
Thickness: 400um, 600um, 900um
Back: C Face
900um As-cut SiC Wafer Manufacturer For Abrasives test
Are you looking for more thicker SiC As-cut wafer on the market? Normally, the unpolished SiC wafer thickness about 400um 475um, but HMT company can produces 500um 600um 900um 1150um SiC wafer no lapping no polishing for abrasives testing, grinding wheel testing etc. we will provide competitive price of Raw cut SiC wafer to you. Please contact us immediately。
Customization:
Product Customization Services for the As-cut SiC Wafer:
Brand Name: HMT
Model Number: 6 INCH
Place of Origin: CHINA
Minimum Order Quantity: 25PCS
Price: Contact us
Packaging Details: Cassette
Delivery Time: 30days
Payment Terms: T/T
Dopant: N-typeNitrogen
Front: Si Face
Resistivity: 0.015-0.028 Ohm-cm
Thickness: 400um, 600um, 900um
Back: C Face
B2B Trade
Price (FOB) | Negotiable | transportation | Air Transportation |
---|---|---|---|
MOQ | Negotiable | Leadtime | Negotiable |
Payment Options | T/T | Shipping time | Negotiable |
- President
- Cory
- Address
- LiSheng Industrial Building,60 Suli Road
- Product Category
- Semiconductors
- Year Established
- 2009
- No. of Total Employees
- 51-100
- Company introduction
-
Homray Material Technology(HMT)was established in 2009, is a leading manufacturer and supplier of Gallium Nitride(GaN) Substrate Wafer(GaN-On-Sapphire Template, Free-standing GaN Wafer), GaN Epi Wafer (GaN-On-Si Epi Wafer, GaN-On-Sapphire Epi Wafer, GaN-On-SiC Epi Wafer), and Silicon Carbide(SiC) Substrate Wafer, SiC Epi Wafer, Silicon Test Wafer etc. It is widely acknowledged that compound Semiconductor (GaN, SiC) with its superior property like wide-bandgap, is expected to the most promising material choice for next generation device. GaN device/module and SiC device/module can achieve low losses and fast switching/oscillation simultaneously because of its high critical electrical field. Homray Material Technology is committed to developing high quality GaN Wafer and SiC Wafer for HEMT RF, power electronics and opto-electronics applications. As the leading Substrate Wafer and Epi Wafer manufacturer and supplier in the semiconductor industry, our dealers and partners are mainly distributed in Europe, USA, Southeast Asia, and South America, our sales value exceeded 65 Million US dollars in 2020. Excellent products quality and professional service won the trust and support from our customers in the world as well as our share of market.
- Main Product
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