Conductive N Type SiC Boule Supplier For Grinding Wheel Lapping Testing

Conductive N Type SiC Boule Supplier For Grinding Wheel Lapping Testing

Conductive N Type SiC Boule Supplier For Grinding Wheel Lapping Testing


Negotiable Min Order Quantity Unit

Required Quantity
Place of Origin
China
Payment Terms
T/T
Production method
Available
Shipping / Lead Time
Negotiable / Negotiable
Keyword
sic boule supplier, sic crystal rod manufacturer
Category
Semiconductors

Suzhou Hengmairui Materials Technology Co.,Ltd.

Membership
BIZ
Country / Year Established
China China / 2009
Business type
Manufacturer
Verified Certificate

9

DUNS

Product name Conductive N Type SiC Boule Supplier For Grinding Wheel Lapping Testing Certification -
Category Semiconductors Material -
Keyword sic boule supplier , sic crystal rod manufacturer Unit Size -
Brand name - Unit Weigh -
origin China Stock 5
Supply type Available HS code -

Product Information

Our SiC Boule is ideal for a wide range of applications, including grinding tests. With a poly type of 4H and electrical resistivity of 0.015-0.028Ω·cm, our SiC Boule is perfect for testing various grinding materials and techniques. Its 4° Toward <11-20> ± 0.5º orientation and thickness of ≥15mm make it a highly versatile product that can be used in a variety of scenarios.


Whether you're a SiC Boule Manufacturer looking for a reliable supplier of high-quality SiC Boule, or an end user looking for a product that can help you achieve your desired results, HMT has the solution you need. Our SiC Boule is available in minimum order quantities of 5PCS, and our pricing and delivery times are competitive and reliable.


When you choose HMT as your SiC Boule supplier, you can rest assured that you're getting a product that meets the highest standards of quality and reliability. Contact us today to learn more about our SiC Boule product and how it can help you achieve your goals!

 

Technical Parameters:

Primaryflat orientation{10-10}±5.0
Orientation4° Toward <11-20> ± 0.5º
PackagingUnit Cassette Vacuum Packaging
Electrical Resistivity0.015-0.028Ω·cm
DopantN-typeNitrogen
Thickness≥15mm
Poly Type4H
Dimension100mm 150mm 200mm

 

B2B Trade

Price (FOB) Negotiable transportation Air Transportation
MOQ Negotiable Leadtime Negotiable
Payment Options T/T Shipping time Negotiable

Suzhou Hengmairui Materials Technology Co.,Ltd.

Country / Year Established
China China / 2009
Membership
BIZ
Business type
Manufacturer

9

DUNS

President
Cory
Address
LiSheng Industrial Building,60 Suli Road
Product Category
Semiconductors
Year Established
2009
No. of Total Employees
51-100
Company introduction

Homray Material Technology(HMT)was established in 2009, is a leading manufacturer and supplier of Gallium Nitride(GaN) Substrate Wafer(GaN-On-Sapphire Template, Free-standing GaN Wafer), GaN Epi Wafer (GaN-On-Si Epi Wafer, GaN-On-Sapphire Epi Wafer, GaN-On-SiC Epi Wafer), and Silicon Carbide(SiC) Substrate Wafer, SiC Epi Wafer, Silicon Test Wafer etc. It is widely acknowledged that compound Semiconductor (GaN, SiC) with its superior property like wide-bandgap, is expected to the most promising material choice for next generation device. GaN device/module and SiC device/module can achieve low losses and fast switching/oscillation simultaneously because of its high critical electrical field. Homray Material Technology is committed to developing high quality GaN Wafer and SiC Wafer for HEMT RF, power electronics and opto-electronics applications. As the leading Substrate Wafer and Epi Wafer manufacturer and supplier in the semiconductor industry, our dealers and partners are mainly distributed in Europe, USA, Southeast Asia, and South America, our sales value exceeded 65 Million US dollars in 2020. Excellent products quality and professional service won the trust and support from our customers in the world as well as our share of market.

 

 

 

 

 

 

 

 

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