Conductive N Type SiC Boule Supplier For Grinding Wheel Lapping Testing
Conductive N Type SiC Boule Supplier For Grinding Wheel Lapping Testing
Negotiable Min Order Quantity Unit
- Required Quantity
-
- Place of Origin
- China
- Payment Terms
- T/T
- Production method
- Available
- Shipping / Lead Time
- Negotiable / Negotiable
- Category
- Semiconductors
Suzhou Hengmairui Materials Technology Co.,Ltd.
- Membership
- BIZ
- Recent Visit
- Dec 13, 2024
- Country / Year Established
- China / 2009
- Business type
- Manufacturer
- Verified Certificate
-
9
Product name | Conductive N Type SiC Boule Supplier For Grinding Wheel Lapping Testing | Certification | - |
---|---|---|---|
Category | Semiconductors | Material | - |
Keyword | sic boule supplier , sic crystal rod manufacturer | Unit Size | - |
Brand name | - | Unit Weigh | - |
origin | China | Stock | 5 |
Supply type | Available | HS code | - |
Product Information
Our SiC Boule is ideal for a wide range of applications, including grinding tests. With a poly type of 4H and electrical resistivity of 0.015-0.028Ω·cm, our SiC Boule is perfect for testing various grinding materials and techniques. Its 4° Toward <11-20> ± 0.5º orientation and thickness of ≥15mm make it a highly versatile product that can be used in a variety of scenarios.
Whether you're a SiC Boule Manufacturer looking for a reliable supplier of high-quality SiC Boule, or an end user looking for a product that can help you achieve your desired results, HMT has the solution you need. Our SiC Boule is available in minimum order quantities of 5PCS, and our pricing and delivery times are competitive and reliable.
When you choose HMT as your SiC Boule supplier, you can rest assured that you're getting a product that meets the highest standards of quality and reliability. Contact us today to learn more about our SiC Boule product and how it can help you achieve your goals!
Technical Parameters:
Primaryflat orientation | {10-10}±5.0 |
Orientation | 4° Toward <11-20> ± 0.5º |
Packaging | Unit Cassette Vacuum Packaging |
Electrical Resistivity | 0.015-0.028Ω·cm |
Dopant | N-typeNitrogen |
Thickness | ≥15mm |
Poly Type | 4H |
Dimension | 100mm 150mm 200mm |
B2B Trade
Price (FOB) | Negotiable | transportation | Air Transportation |
---|---|---|---|
MOQ | Negotiable | Leadtime | Negotiable |
Payment Options | T/T | Shipping time | Negotiable |
- President
- Cory
- Address
- LiSheng Industrial Building,60 Suli Road
- Product Category
- Semiconductors
- Year Established
- 2009
- No. of Total Employees
- 51-100
- Company introduction
-
Homray Material Technology(HMT)was established in 2009, is a leading manufacturer and supplier of Gallium Nitride(GaN) Substrate Wafer(GaN-On-Sapphire Template, Free-standing GaN Wafer), GaN Epi Wafer (GaN-On-Si Epi Wafer, GaN-On-Sapphire Epi Wafer, GaN-On-SiC Epi Wafer), and Silicon Carbide(SiC) Substrate Wafer, SiC Epi Wafer, Silicon Test Wafer etc. It is widely acknowledged that compound Semiconductor (GaN, SiC) with its superior property like wide-bandgap, is expected to the most promising material choice for next generation device. GaN device/module and SiC device/module can achieve low losses and fast switching/oscillation simultaneously because of its high critical electrical field. Homray Material Technology is committed to developing high quality GaN Wafer and SiC Wafer for HEMT RF, power electronics and opto-electronics applications. As the leading Substrate Wafer and Epi Wafer manufacturer and supplier in the semiconductor industry, our dealers and partners are mainly distributed in Europe, USA, Southeast Asia, and South America, our sales value exceeded 65 Million US dollars in 2020. Excellent products quality and professional service won the trust and support from our customers in the world as well as our share of market.
- Main Product