RF GaN Epi Wafer HEMT Structure On SiC Manufacturer

RF GaN Epi Wafer HEMT Structure On SiC Manufacturer

RF GaN Epi Wafer HEMT Structure On SiC Manufacturer


Negotiable Min Order Quantity Unit

Required Quantity
Place of Origin
China
Payment Terms
T/T
Production method
Available
Shipping / Lead Time
Negotiable / Negotiable
Keyword
gan epi wafer on sic rf hemt manufacturer, algan/gan on sic hemt epi wafer manufacturer
Category
Semiconductors

Suzhou Hengmairui Materials Technology Co.,Ltd.

Membership
BIZ
Country / Year Established
China China / 2009
Business type
Manufacturer
Verified Certificate

9

DUNS

Product name RF GaN Epi Wafer HEMT Structure On SiC Manufacturer Certification -
Category Semiconductors Material -
Keyword gan epi wafer on sic rf hemt manufacturer , algan/gan on sic hemt epi wafer manufacturer Unit Size -
Brand name - Unit Weigh -
origin China Stock 15
Supply type Available HS code -

Product Information

RF GaN Epi Wafer HEMT Structure On SiC Manufacturer 


HMT supply 4 inch GaN HEMT wafer on SiC with favourable price on the market for domestic and foreign customers. GaN Epi Wafer is a high-quality wafer used for the fabrication of RF HEMT devices. It consists of a SiC substrate, a thin SiN layer, and a GaN buffer layer. The SiN layer is essential for providing excellent surface passivation and improving device performance. The AlGaN/GaN layers on top of the GaN buffer layer form the active region of the device, allowing for high-frequency operation and high-power handling capabilities.The Al content in the AlGaN layer can be customized according to the specific needs of the device, ranging from 15% to 30%. This flexibility allows for the optimization of device performance for various applications. The bow of the wafer is also strictly controlled to be ≤±50um, ensuring uniformity and consistency in device fabrication.

Moreover, the use of SiC as the substrate offers excellent thermal conductivity and high breakdown voltage, making it an ideal choice for high-power and high-temperature applications. The GaN buffer layer, with a thickness of 2-3nm, serves as a transition layer between the SiC substrate and the active device layers, providing strain relief and improving the crystal quality of the device.

RF GaN Epi Wafer HEMT Structure On SiC Manufacturer 


HMT supply 4 inch GaN HEMT wafer on SiC with favourable price on the market for domestic and foreign customers. GaN Epi Wafer is a high-quality wafer used for the fabrication of RF HEMT devices. It consists of a SiC substrate, a thin SiN layer, and a GaN buffer layer. The SiN layer is essential for providing excellent surface passivation and improving device performance. The AlGaN/GaN layers on top of the GaN buffer layer form the active region of the device, allowing for high-frequency operation and high-power handling capabilities.The Al content in the AlGaN layer can be customized according to the specific needs of the device, ranging from 15% to 30%. This flexibility allows for the optimization of device performance for various applications. The bow of the wafer is also strictly controlled to be ≤±50um, ensuring uniformity and consistency in device fabrication.

Moreover, the use of SiC as the substrate offers excellent thermal conductivity and high breakdown voltage, making it an ideal choice for high-power and high-temperature applications. The GaN buffer layer, with a thickness of 2-3nm, serves as a transition layer between the SiC substrate and the active device layers, providing strain relief and improving the crystal quality of the device.

 

B2B Trade

Price (FOB) Negotiable transportation Air Transportation
MOQ Negotiable Leadtime Negotiable
Payment Options T/T Shipping time Negotiable

Suzhou Hengmairui Materials Technology Co.,Ltd.

Country / Year Established
China China / 2009
Membership
BIZ
Business type
Manufacturer

9

DUNS

President
Cory
Address
LiSheng Industrial Building,60 Suli Road
Product Category
Semiconductors
Year Established
2009
No. of Total Employees
51-100
Company introduction

Homray Material Technology(HMT)was established in 2009, is a leading manufacturer and supplier of Gallium Nitride(GaN) Substrate Wafer(GaN-On-Sapphire Template, Free-standing GaN Wafer), GaN Epi Wafer (GaN-On-Si Epi Wafer, GaN-On-Sapphire Epi Wafer, GaN-On-SiC Epi Wafer), and Silicon Carbide(SiC) Substrate Wafer, SiC Epi Wafer, Silicon Test Wafer etc. It is widely acknowledged that compound Semiconductor (GaN, SiC) with its superior property like wide-bandgap, is expected to the most promising material choice for next generation device. GaN device/module and SiC device/module can achieve low losses and fast switching/oscillation simultaneously because of its high critical electrical field. Homray Material Technology is committed to developing high quality GaN Wafer and SiC Wafer for HEMT RF, power electronics and opto-electronics applications. As the leading Substrate Wafer and Epi Wafer manufacturer and supplier in the semiconductor industry, our dealers and partners are mainly distributed in Europe, USA, Southeast Asia, and South America, our sales value exceeded 65 Million US dollars in 2020. Excellent products quality and professional service won the trust and support from our customers in the world as well as our share of market.

 

 

 

 

 

 

 

 

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