As-cut SiC wafer Manufacturer 6 inch Unpolished SiC Substrate supplier

As-cut SiC wafer Manufacturer 6 inch Unpolished SiC Substrate supplier

As-cut SiC wafer Manufacturer 6 inch Unpolished SiC Substrate supplier


Negotiable Min Order Quantity Unit

Required Quantity
Place of Origin
China
Payment Terms
T/T
Production method
Available
Shipping / Lead Time
Negotiable / Negotiable
Keyword
as-cut sic wafer manufacturer, unpolished sic substrate supplier, raw-cut sic substrate manufacturer
Category
Semiconductors

Suzhou Hengmairui Materials Technology Co.,Ltd.

Membership
BIZ
Country / Year Established
China China / 2009
Business type
Manufacturer
Verified Certificate

9

DUNS

Product name As-cut SiC wafer Manufacturer 6 inch Unpolished SiC Substrate supplier Certification -
Category Semiconductors Material -
Keyword as-cut sic wafer manufacturer , unpolished sic substrate supplier , raw-cut sic substrate manufacturer Unit Size -
Brand name - Unit Weigh -
origin China Stock 25
Supply type Available HS code -

Product Information

As-cut SiC wafer Manufacturer 6 inch Unpolished SiC Substrate supplier

We manufacture both 4 inch and 6 inch As-cut SIC wafer with favourable quotation on the market. Our As-cut SiC wafer MPD<1cm-2 and thickness about 400um and 600um. Purchasing unpolished SiC wafer for grinding and polishing equipment testing. Please feel free to contact us for more detailed spec of Raw-cut SiC wafer.

As-cut SiC wafer Manufacturer 6 inch Unpolished SiC Substrate supplier

We manufacture both 4 inch and 6 inch As-cut SIC wafer with favourable quotation on the market. Our As-cut SiC wafer MPD<1cm-2 and thickness about 400um and 600um. Purchasing unpolished SiC wafer for grinding and polishing equipment testing. Please feel free to contact us for more detailed spec of Raw-cut SiC wafer.


Rf devices are the core components of wireless communication, including RF switch, LNA, power amplifier and filter, etc.  At present, silicon-based LDMOS devices have been applied for many years, mainly in the low-frequency fields below 4GHz.  With the popularization of 5G communication technology, the performance requirements of power amplifier are becoming higher.  

 

B2B Trade

Price (FOB) Negotiable transportation Air Transportation
MOQ Negotiable Leadtime Negotiable
Payment Options T/T Shipping time Negotiable

Suzhou Hengmairui Materials Technology Co.,Ltd.

Country / Year Established
China China / 2009
Membership
BIZ
Business type
Manufacturer

9

DUNS

President
Cory
Address
LiSheng Industrial Building,60 Suli Road
Product Category
Semiconductors
Year Established
2009
No. of Total Employees
51-100
Company introduction

Homray Material Technology(HMT)was established in 2009, is a leading manufacturer and supplier of Gallium Nitride(GaN) Substrate Wafer(GaN-On-Sapphire Template, Free-standing GaN Wafer), GaN Epi Wafer (GaN-On-Si Epi Wafer, GaN-On-Sapphire Epi Wafer, GaN-On-SiC Epi Wafer), and Silicon Carbide(SiC) Substrate Wafer, SiC Epi Wafer, Silicon Test Wafer etc. It is widely acknowledged that compound Semiconductor (GaN, SiC) with its superior property like wide-bandgap, is expected to the most promising material choice for next generation device. GaN device/module and SiC device/module can achieve low losses and fast switching/oscillation simultaneously because of its high critical electrical field. Homray Material Technology is committed to developing high quality GaN Wafer and SiC Wafer for HEMT RF, power electronics and opto-electronics applications. As the leading Substrate Wafer and Epi Wafer manufacturer and supplier in the semiconductor industry, our dealers and partners are mainly distributed in Europe, USA, Southeast Asia, and South America, our sales value exceeded 65 Million US dollars in 2020. Excellent products quality and professional service won the trust and support from our customers in the world as well as our share of market.

 

 

 

 

 

 

 

 

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