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Product name	GaN-on-SiC Epi Wafers for RF HEMT manufacturers	Certification	-
Category	Semiconductors	Material	-
Keyword	gan epi wafer supplier , gan-on-sic epi wafers manufacturer , 6 inch e mode gan on sic epi wafer manufacturer	Unit Size	-
Brand name	-	Unit Weigh	-
origin	China	Stock	10000
Supply type	Available	HS code	-

Product Information

GaN-on-SiC Epi Wafers for RF HEMT manufacturers

Find GaN-on-SiC Epitaxy Wafer manufacturers and suppliers in China, Contact HMT company, we provide high quanlity 4 inch GaN Epi wafers for RF and power application. We offer competitive price of AlGaN/GaN-on-SiC at the market.

The use of GaN power devices, is expected, bcause GaN is material that has better physical limits. GaN can be expected to have on-resistance theoretically about three orders of magnitude smaller than conventional Si, contributing to miniaturization and energy saving of electric equipment as a power transistor that can realize high-speed switching.

GaN epitaxial wafer technology is the core technology of GaN chip production, GaN high-power semiconductor,high RF semi -conductor as a large number of power control systems and communications for high-speed rail, electric vehicles, 5G communications, radar, robotics and other industries .

GaN-on-SiC Epi Wafers for RF HEMT manufacturers

Find GaN-on-SiC Epitaxy Wafer manufacturers and suppliers in China, Contact HMT company, we provide high quanlity 4 inch GaN Epi wafers for RF and power application. We offer competitive price of AlGaN/GaN-on-SiC at the market.

The use of GaN power devices, is expected, bcause GaN is material that has better physical limits. GaN can be expected to have on-resistance theoretically about three orders of magnitude smaller than conventional Si, contributing to miniaturization and energy saving of electric equipment as a power transistor that can realize high-speed switching.

GaN epitaxial wafer technology is the core technology of GaN chip production, GaN high-power semiconductor,high RF semi -conductor as a large number of power control systems and communications for high-speed rail, electric vehicles, 5G communications, radar, robotics and other industries .

B2B Trade

Price (FOB)	Negotiable	transportation	Air Transportation
MOQ	Negotiable	Leadtime	Negotiable
Payment Options	T/T	Shipping time	Negotiable

Suzhou Hengmairui Materials Technology Co.,Ltd.

Minisite Heart

Country / Year Established: China / 2009

Membership: BIZ

Business type: Manufacturer

9

DUNS

President: Cory

Address: LiSheng Industrial Building,60 Suli Road

Product Category: Semiconductors

Year Established: 2009

No. of Total Employees: 51-100

Company introduction: Homray Material Technology(HMT)was established in 2009, is a leading manufacturer and supplier of Gallium Nitride(GaN) Substrate Wafer(GaN-On-Sapphire Template, Free-standing GaN Wafer), GaN Epi Wafer (GaN-On-Si Epi Wafer, GaN-On-Sapphire Epi Wafer, GaN-On-SiC Epi Wafer), and Silicon Carbide(SiC) Substrate Wafer, SiC Epi Wafer, Silicon Test Wafer etc. It is widely acknowledged that compound Semiconductor (GaN, SiC) with its superior property like wide-bandgap, is expected to the most promising material choice for next generation device. GaN device/module and SiC device/module can achieve low losses and fast switching/oscillation simultaneously because of its high critical electrical field. Homray Material Technology is committed to developing high quality GaN Wafer and SiC Wafer for HEMT RF, power electronics and opto-electronics applications. As the leading Substrate Wafer and Epi Wafer manufacturer and supplier in the semiconductor industry, our dealers and partners are mainly distributed in Europe, USA, Southeast Asia, and South America, our sales value exceeded 65 Million US dollars in 2020. Excellent products quality and professional service won the trust and support from our customers in the world as well as our share of market.