4 inch conductive SiC substrate and SiC ingots manufacturer

Product name	4 inch conductive SiC substrate and SiC ingots manufacturer	Certification	-
Category	Semiconductors	Material	-
Keyword	sic substrate supplier , 4 inch 4h-n sic wafer factory , conductive sic ingots manufacturer	Unit Size	-
Brand name	-	Unit Weigh	-
origin	China	Stock	1
Supply type	Available	HS code	-

Product Information

4 inch conductive SiC substrate and SiC ingots manufacturer

Homray Material Technology not only provide SiC Substrate with 4 inch and 6 inch but also provide conductive SiC ingots and semi-insulating SiC ingots. Please do not hesitate to contact us for detailed datasheet and favourable quotation.SiC has wide band gap width, high breakdown electric field, high thermal conductivity and high electron saturation rate of physical properties, so that it has high temperature resistance, high pressure resistance, high frequency, high power, radiation resistance and other advantages, can reduce downstream product energy consumption, reduce terminal volume. The band gap width of silicon carbide is about 3.2eV, and the wide band width of silicon is 1.12eV, which is about 1/3 of the band gap width of silicon carbide, indicating that silicon carbide has significantly better high pressure resistance than silicon material.

4 inch conductive SiC substrate and SiC ingots manufacturer

Homray Material Technology not only provide SiC Substrate with 4 inch and 6 inch but also provide conductive SiC ingots and semi-insulating SiC ingots. Please do not hesitate to contact us for detailed datasheet and favourable quotation.SiC has wide band gap width, high breakdown electric field, high thermal conductivity and high electron saturation rate of physical properties, so that it has high temperature resistance, high pressure resistance, high frequency, high power, radiation resistance and other advantages, can reduce downstream product energy consumption, reduce terminal volume. The band gap width of silicon carbide is about 3.2eV, and the wide band width of silicon is 1.12eV, which is about 1/3 of the band gap width of silicon carbide, indicating that silicon carbide has significantly better high pressure resistance than silicon material.

B2B Trade

Price (FOB)	Negotiable	transportation	Express
MOQ	Negotiable	Leadtime	Negotiable
Payment Options	T/T	Shipping time	Negotiable

Suzhou Hengmairui Materials Technology Co.,Ltd.

Minisite Heart

Country / Year Established: China / 2009

Membership: BIZ

Recent Visit: Dec 13, 2024

Business type: Manufacturer

9

DUNS

President: Cory

Address: LiSheng Industrial Building,60 Suli Road

Product Category: Semiconductors

Year Established: 2009

No. of Total Employees: 51-100

Company introduction: Homray Material Technology(HMT)was established in 2009, is a leading manufacturer and supplier of Gallium Nitride(GaN) Substrate Wafer(GaN-On-Sapphire Template, Free-standing GaN Wafer), GaN Epi Wafer (GaN-On-Si Epi Wafer, GaN-On-Sapphire Epi Wafer, GaN-On-SiC Epi Wafer), and Silicon Carbide(SiC) Substrate Wafer, SiC Epi Wafer, Silicon Test Wafer etc. It is widely acknowledged that compound Semiconductor (GaN, SiC) with its superior property like wide-bandgap, is expected to the most promising material choice for next generation device. GaN device/module and SiC device/module can achieve low losses and fast switching/oscillation simultaneously because of its high critical electrical field. Homray Material Technology is committed to developing high quality GaN Wafer and SiC Wafer for HEMT RF, power electronics and opto-electronics applications. As the leading Substrate Wafer and Epi Wafer manufacturer and supplier in the semiconductor industry, our dealers and partners are mainly distributed in Europe, USA, Southeast Asia, and South America, our sales value exceeded 65 Million US dollars in 2020. Excellent products quality and professional service won the trust and support from our customers in the world as well as our share of market.