SI type SiC Ingots Supplier 4H-N type SiC ingots manufacturer
SI type SiC Ingots Supplier 4H-N type SiC ingots manufacturer
Negotiable Min Order Quantity Unit
- Required Quantity
-
- Place of Origin
- China
- Payment Terms
- T/T
- Production method
- Available
- Shipping / Lead Time
- Negotiable / Negotiable
- Category
- Semiconductors
Suzhou Hengmairui Materials Technology Co.,Ltd.
- Membership
- BIZ
- Recent Visit
- Dec 13, 2024
- Country / Year Established
- China / 2009
- Business type
- Manufacturer
- Verified Certificate
-
9
Product name | SI type SiC Ingots Supplier 4H-N type SiC ingots manufacturer | Certification | - |
---|---|---|---|
Category | Semiconductors | Material | - |
Keyword | sic ingots manufacturer , sic ingots supplier | Unit Size | - |
Brand name | - | Unit Weigh | - |
origin | China | Stock | 50 |
Supply type | Available | HS code | - |
Product Information
SI type SiC Ingots Supplier 4H-N type SiC ingots manufacturer
HMT company offer high quality SiC ingots with 4 inch and 6 inch, diameter 100mm and 150mm. Both conductive type SiC ingtos and semi-insulating ingots are available. please contact HMT for detailed sic products.
Compare wiht Si material, SiC material has Higher thermal conductivity, better heat dissipation. Temperature is one of the main reasons affecting device life, thermal conductivity represents the thermal conductivity of materials, silicon carbide high thermal conductivity can effectively conduct heat, reduce the temperature of the device, maintain its normal operation, which makes the cooling system can be better optimized.
SI type SiC Ingots Supplier 4H-N type SiC ingots manufacturer
HMT company offer high quality SiC ingots with 4 inch and 6 inch, diameter 100mm and 150mm. Both conductive type SiC ingtos and semi-insulating ingots are available. please contact HMT for detailed sic products.
Compare wiht Si material, SiC material has Higher thermal conductivity, better heat dissipation. Temperature is one of the main reasons affecting device life, thermal conductivity represents the thermal conductivity of materials, silicon carbide high thermal conductivity can effectively conduct heat, reduce the temperature of the device, maintain its normal operation, which makes the cooling system can be better optimized.
B2B Trade
Price (FOB) | Negotiable | transportation | Express |
---|---|---|---|
MOQ | Negotiable | Leadtime | Negotiable |
Payment Options | T/T | Shipping time | Negotiable |
- President
- Cory
- Address
- LiSheng Industrial Building,60 Suli Road
- Product Category
- Semiconductors
- Year Established
- 2009
- No. of Total Employees
- 51-100
- Company introduction
-
Homray Material Technology(HMT)was established in 2009, is a leading manufacturer and supplier of Gallium Nitride(GaN) Substrate Wafer(GaN-On-Sapphire Template, Free-standing GaN Wafer), GaN Epi Wafer (GaN-On-Si Epi Wafer, GaN-On-Sapphire Epi Wafer, GaN-On-SiC Epi Wafer), and Silicon Carbide(SiC) Substrate Wafer, SiC Epi Wafer, Silicon Test Wafer etc. It is widely acknowledged that compound Semiconductor (GaN, SiC) with its superior property like wide-bandgap, is expected to the most promising material choice for next generation device. GaN device/module and SiC device/module can achieve low losses and fast switching/oscillation simultaneously because of its high critical electrical field. Homray Material Technology is committed to developing high quality GaN Wafer and SiC Wafer for HEMT RF, power electronics and opto-electronics applications. As the leading Substrate Wafer and Epi Wafer manufacturer and supplier in the semiconductor industry, our dealers and partners are mainly distributed in Europe, USA, Southeast Asia, and South America, our sales value exceeded 65 Million US dollars in 2020. Excellent products quality and professional service won the trust and support from our customers in the world as well as our share of market.
- Main Product