Monocrystal GaN substrate wafer suppliers
Monocrystal GaN substrate wafer suppliers
Negotiable Min Order Quantity Unit
- Required Quantity
-
- Place of Origin
- China
- Payment Terms
- T/T,Western Union
- Production method
- Available
- Shipping / Lead Time
- Negotiable / Negotiable
- Category
- Semiconductors
Suzhou Hengmairui Materials Technology Co.,Ltd.
- Membership
- BIZ
- Recent Visit
- Dec 13, 2024
- Country / Year Established
- China / 2009
- Business type
- Manufacturer
- Verified Certificate
-
9
Product name | Monocrystal GaN substrate wafer suppliers | Certification | - |
---|---|---|---|
Category | Semiconductors | Material | - |
Keyword | gan substrate manufacturer , gan substrate wafer suppliers , monocrystal gan wafer supplier | Unit Size | - |
Brand name | - | Unit Weigh | - |
origin | China | Stock | 10000 |
Supply type | Available | HS code | - |
Product Information
Monocrystal GaN substrate wafer suppliers
Homray Material Technology Provide monocrystal GaN Substrate wafer with un-doped N type and Si-doped N type. The GaN layer thickness of GaN wafer is 4.5um. Polishing type is single side polished.
Homray Material Technology’s advanced proprietary technology enables cost effective starting substrates for GaN material research and development or device production. This technology utilizes novel techniques which mitigate obstacles that have hindered high quality material growth on readily available substrates that are commonly used in the semiconductor industry.
B2B Trade
Price (FOB) | Negotiable | transportation | Air Transportation |
---|---|---|---|
MOQ | Negotiable | Leadtime | Negotiable |
Payment Options | T/T,Western Union | Shipping time | Negotiable |
- President
- Cory
- Address
- LiSheng Industrial Building,60 Suli Road
- Product Category
- Semiconductors
- Year Established
- 2009
- No. of Total Employees
- 51-100
- Company introduction
-
Homray Material Technology(HMT)was established in 2009, is a leading manufacturer and supplier of Gallium Nitride(GaN) Substrate Wafer(GaN-On-Sapphire Template, Free-standing GaN Wafer), GaN Epi Wafer (GaN-On-Si Epi Wafer, GaN-On-Sapphire Epi Wafer, GaN-On-SiC Epi Wafer), and Silicon Carbide(SiC) Substrate Wafer, SiC Epi Wafer, Silicon Test Wafer etc. It is widely acknowledged that compound Semiconductor (GaN, SiC) with its superior property like wide-bandgap, is expected to the most promising material choice for next generation device. GaN device/module and SiC device/module can achieve low losses and fast switching/oscillation simultaneously because of its high critical electrical field. Homray Material Technology is committed to developing high quality GaN Wafer and SiC Wafer for HEMT RF, power electronics and opto-electronics applications. As the leading Substrate Wafer and Epi Wafer manufacturer and supplier in the semiconductor industry, our dealers and partners are mainly distributed in Europe, USA, Southeast Asia, and South America, our sales value exceeded 65 Million US dollars in 2020. Excellent products quality and professional service won the trust and support from our customers in the world as well as our share of market.
- Main Product
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