3‘’ Silicon Carbide Wafer 6H-N Type SiC substrate supplier
Negotiable Min Order Quantity Unit
- Required Quantity
-
- Place of Origin
- China
- Payment Terms
- T/T
- Production method
- Negotiable
- Shipping / Lead Time
- Negotiable / Negotiable
- Category
- Semiconductors
Suzhou Hengmairui Materials Technology Co.,Ltd.
- Verified Certificate
-
9
Product name | 3‘’ Silicon Carbide Wafer 6H-N Type SiC substrate supplier | Certification | - |
---|---|---|---|
Category | Semiconductors | Ingredients | - |
Keyword | sic wafer , silicon carbide wafer , sic substrate supplier | Unit Size | - |
Brand name | - | Unit Weigh | - |
origin | China | Stock | - |
Supply type | - | HS code | - |
Product Information
3‘’ Silicon Carbide Wafer 6H-N Type SiC substrate supplier
Homray Material Technology offers semiconductor silicon carbide wafers,6H SiC and 4H SiC in different quality grades for researcher and industry manufacturers. We has developed SiC crystal growth technology and SiC crystal wafer processing technology,established a production line to manufacturer SiC substrate,Which is applied in GaN epitaxy device,power devices,high-temperature device and optoelectronic Devices. As a professional company,we are devoted to continuously improve the quality of currently substates and develop large size substrates.
SiC wafer is the foremost semiconductor material that can operate at higher temperature, power level, and voltage. These unique properties of SiC can apply to variety applications like Power electronic switches, LED technology and Hybrid Electric vehicles.
B2B Trade
Price (FOB) | Negotiable | transportation | - |
---|---|---|---|
MOQ | Negotiable | Leadtime | Negotiable |
Payment Options | T/T | Shipping time | Negotiable |
- President
- Cory
- Address
- LiSheng Industrial Building,60 Suli Road
- Product Category
- Semiconductors
- Year Established
- 2009
- No. of Total Employees
- 51-100
- Company introduction
-
Homray Material Technology(HMT)was established in 2009, is a leading manufacturer and supplier of Gallium Nitride(GaN) Substrate Wafer(GaN-On-Sapphire Template, Free-standing GaN Wafer), GaN Epi Wafer (GaN-On-Si Epi Wafer, GaN-On-Sapphire Epi Wafer, GaN-On-SiC Epi Wafer), and Silicon Carbide(SiC) Substrate Wafer, SiC Epi Wafer, Silicon Test Wafer etc. It is widely acknowledged that compound Semiconductor (GaN, SiC) with its superior property like wide-bandgap, is expected to the most promising material choice for next generation device. GaN device/module and SiC device/module can achieve low losses and fast switching/oscillation simultaneously because of its high critical electrical field. Homray Material Technology is committed to developing high quality GaN Wafer and SiC Wafer for HEMT RF, power electronics and opto-electronics applications. As the leading Substrate Wafer and Epi Wafer manufacturer and supplier in the semiconductor industry, our dealers and partners are mainly distributed in Europe, USA, Southeast Asia, and South America, our sales value exceeded 65 Million US dollars in 2020. Excellent products quality and professional service won the trust and support from our customers in the world as well as our share of market.
- Main Product
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