Gallium NItride GaN Crystal Substrate supplier

Gallium NItride GaN Crystal Substrate supplier


Negotiable Min Order Quantity Unit

Required Quantity
Place of Origin
China
Payment Terms
T/T
Production method
Negotiable
Shipping / Lead Time
Negotiable / Negotiable
Keyword
gallium nitride manufacturer, gan crystal substrate
Category
Semiconductors

Suzhou Hengmairui Materials Technology Co.,Ltd.

Membership
BIZ
Country / Year Established
China China / 2009
Business type
Manufacturer
Verified Certificate

9

DUNS

Product name Gallium NItride GaN Crystal Substrate supplier Certification -
Category Semiconductors Ingredients -
Keyword gallium nitride manufacturer , gan crystal substrate Unit Size -
Brand name - Unit Weigh -
origin China Stock -
Supply type - HS code -

Product Information

 

Homray Material Technologys advanced proprietary technology enables cost effective starting substrates for GaN material research and development or device production. This technology utilizes novel techniques which mitigate obstacles that have hindered high quality material growth on readily available substrates that are commonly used in the semiconductor industry.

 

 

Gallium nitride (GaN) is a binary III/V direct bandgap semiconductor commonly used in light-emitting diodes since the 1990s. The compound is a very hard material that has a Wurtzite crystal structure. Its wide band gap of 3.4 eV affords it special properties for applications in optoelectronic, high-power and high-frequency devices. For example, GaN is the substrate which makes violet (405 nm) laser diodes possible, without use of nonlinear optical frequency-doubling.

 

B2B Trade

Price (FOB) Negotiable transportation -
MOQ Negotiable Leadtime Negotiable
Payment Options T/T Shipping time Negotiable

Suzhou Hengmairui Materials Technology Co.,Ltd.

Country / Year Established
China China / 2009
Membership
BIZ
Business type
Manufacturer

9

DUNS

President
Cory
Address
LiSheng Industrial Building,60 Suli Road
Product Category
Semiconductors
Year Established
2009
No. of Total Employees
51-100
Company introduction

Homray Material Technology(HMT)was established in 2009, is a leading manufacturer and supplier of Gallium Nitride(GaN) Substrate Wafer(GaN-On-Sapphire Template, Free-standing GaN Wafer), GaN Epi Wafer (GaN-On-Si Epi Wafer, GaN-On-Sapphire Epi Wafer, GaN-On-SiC Epi Wafer), and Silicon Carbide(SiC) Substrate Wafer, SiC Epi Wafer, Silicon Test Wafer etc. It is widely acknowledged that compound Semiconductor (GaN, SiC) with its superior property like wide-bandgap, is expected to the most promising material choice for next generation device. GaN device/module and SiC device/module can achieve low losses and fast switching/oscillation simultaneously because of its high critical electrical field. Homray Material Technology is committed to developing high quality GaN Wafer and SiC Wafer for HEMT RF, power electronics and opto-electronics applications. As the leading Substrate Wafer and Epi Wafer manufacturer and supplier in the semiconductor industry, our dealers and partners are mainly distributed in Europe, USA, Southeast Asia, and South America, our sales value exceeded 65 Million US dollars in 2020. Excellent products quality and professional service won the trust and support from our customers in the world as well as our share of market.

 

 

 

 

 

 

 

 

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